August 20, 2025 /SemiMedia/ — The growing adoption of silicon carbide (SiC) power devices in electric vehicles, renewable energy systems, and telecom infrastructure is raising demand for faster protection solutions, as SiC MOSFETs have shorter short-circuit withstand times than traditional IGBTs.

Diotec Semiconductor has introduced the SI02C065SMB, a 2 A/650 V SiC Schottky diode in a DO-214AA (SMB) package, tailored for desaturation detection circuits that safeguard SiC MOSFETs during short-circuit events.

Engineered with low switching losses and high reverse voltage tolerance, the device is optimized for automotive auxiliary modules, solar inverters, and telecom power supplies. By enabling robust and high-speed short-circuit protection, the SI02C065SMB strengthens reliability in next-generation SiC-based systems.

For more information, please visit https://diotec.com/en/product/SI02C065SMB.html.