October 16, 2025 /SemiMedia/ — Tokyo Electron (TEL) has commissioned a new development facility in Kumamoto Prefecture to strengthen its R&D capabilities in front-end semiconductor equipment, particularly coater/developers, cleaning systems, and support for sub-nanometer nodes.
The facility spans roughly 27,000 square meters across three to four stories and is located within an industrial park that already hosts TSMC, Sony and other semiconductor firms. Operational readiness is anticipated in spring 2026.
TEL’s Kyushu unit leadership emphasizes that the new center is specifically intended to accelerate development of tools for 1nm and beyond. With climate control, state-of-the-art cleanrooms and upgraded infrastructure, TEL aims to boost its local development throughput by fourfold.
At Kumamoto, TEL already develops and manufactures coater/developer and cleaning systems. These systems are critical in photolithography pre- and post-processing, controlling uniformity, defectivity, and consistency. In this niche, TEL is considered a dominant or near-monopoly supplier.
TEL has established research partnerships with ASML in the Netherlands and Imec in Belgium to co-develop advanced coating, resist handling, and pattern processing technologies. Meanwhile, its global R&D centers collaborate closely with major foundries to roadmap next-generation toolsets.
Within TEL’s product portfolio, the company competes across deposition, coating/development, etching, and cleaning. While its position in etch tools faces intensifying competition, strengthening its leadership in coater/developer segments is viewed as a strategic anchor and a stepping stone for expansion downstream.
TEL also acknowledges recent headwinds in profitability. Due to shifts in customer CAPEX pacing and lagging demand in China, the company now forecasts a decline in net profit for the fiscal year ending March. In response, TEL is doubling down on R&D: it plans to invest over ¥1.5 trillion in research through fiscal 2029, nearly 90% more than in the prior five-year span.
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