May 6, 2025 /SemiMedia/ — Infineon Technologies AG has introduced a new generation of silicon carbide-based CoolSiC™ JFETs to support the evolution of solid-state power distribution systems in industrial and automotive applications. The new devices combine ultra-low conduction losses, solid turn-off characteristics, and strong robustness, enabling reliable performance in solid-state circuit breakers (SSCBs), AI data center hot-swaps, motor soft starters, and eFuses.

With R DS(ON) as low as 1.5 mΩ at 750 V and 2.3 mΩ at 1200 V, the CoolSiC JFET series delivers industry-leading conduction efficiency. Packaged in top-side cooled Q-DPAK, the devices support simple paralleling and current scaling in compact high-power designs. Their consistent switching behavior under overload and thermal stress enhances system reliability in demanding environments.

To address thermal and mechanical demands in industrial power settings, Infineon applies its advanced .XT interconnection and diffusion soldering technologies, improving thermal impedance and durability under pulsed loads. This makes CoolSiC JFETs particularly suitable for repetitive, high-frequency operations.

Infineon’s Green Industrial Power Division President, Dr. Peter Wawer, stated that the new SiC JFETs mark a milestone in the pursuit of smarter and more robust power architectures: “We’re equipping our customers with optimized devices for emerging solid-state applications and reaffirming our position in wide-bandgap semiconductor innovation.”

Engineering samples will be available in late 2025, with volume production beginning in 2026. The portfolio will expand with additional packages and module formats. For more information, please visit https://www.infineon.com/cms/en/product/promopages/silicon-carbide-jfets/?redirId=304415.