May 6, 2025 /SemiMedia/ — Polar Semiconductor has signed a strategic licensing agreement with Renesas Electronics to manufacture 650V-class Gallium Nitride on Silicon (GaN-on-Si) power devices based on Renesas’ D-mode technology. The production will take place at Polar’s upgraded 200mm automotive-grade high-volume fab in Minnesota, now equipped with advanced automation and process technologies.

This collaboration marks a significant step in establishing a robust U.S.-based supply chain for GaN semiconductors, targeting high-growth sectors such as automotive, industrial, aerospace, consumer electronics, and data centers. By leveraging Polar’s domestic manufacturing capacity and Renesas’ power semiconductor expertise, the agreement aims to accelerate adoption of GaN devices through scalable, cost-efficient production.

Scaling to 200mm wafers is expected to reduce cost barriers and enhance device architecture efficiency, improving commercial viability across a range of applications. The partnership ensures multi-sourcing options for Renesas customers while reinforcing the strategic supply of wide-bandgap technology within the U.S.

“GaN technology is transforming both power and RF sectors,” said Surya Iyer, President and COO of Polar. “This partnership strengthens the U.S. semiconductor ecosystem and positions us to support critical national programs and next-gen power platforms.”

Chris Allexandre, SVP and GM of Renesas’ Power Products Group, added, “Teaming up with Polar allows us to scale proven GaN technology to 200mm and address the surging demand across e-Mobility, infrastructure, industrial energy, and high-end IoT sectors, while ensuring secure U.S.-based supply capabilities.”