September 17, 2024 /SemiMedia/ — Infineon has announced the development of the world’s first 12-inch (300mm) GaN wafer technology for producing gallium nitride (GaN) chips, aimed at addressing the rising demand for high-efficiency power semiconductors in AI data centers and electric vehicles. The company expects the market for this technology to reach several billion dollars by the end of the decade.

Adam White, President of Power & Sensor Systems at Infineon, stated that the first samples based on the 12-inch GaN wafers will be available to customers by the fourth quarter of 2025. Compared to the traditional 8-inch (200mm) wafers, 12-inch wafers can accommodate 2.3 times more GaN chips, significantly boosting production efficiency. While the power chip industry primarily uses 8-inch wafers, all advanced processor chips are now manufactured on 12-inch wafers.

GaN is gaining traction as an alternative to silicon in chip manufacturing due to its superior efficiency, speed, lightweight properties, and ability to operate at high temperatures and voltages. Following its acquisition of GaN Systems in October 2023, Infineon has accelerated innovation and product expansion in GaN technology through the integration of R&D resources and collaboration between the teams.

In addition to its advancements in GaN, Infineon is also expanding in the silicon carbide (SiC) space. In August, the company began production at its largest-ever power chip plant in Kulim, Malaysia. Infineon noted that once the plant reaches full capacity within the next five years, it will become the world’s largest SiC manufacturing facility, further strengthening Infineon’s position in the power semiconductor market.