May 28, 2026 /SemiMedia/ — STMicroelectronics has expanded its PowerGaN portfolio with new 700V gallium-nitride (GaN) power semiconductors designed to improve efficiency and increase power density in high-voltage power supplies for AI servers, robotics, industrial systems, and smart-grid converters.

The new PowerGaN devices offer low conduction losses, minimal switching loss at high operating frequencies, and zero reverse-recovery charge, enabling smaller, lighter and cooler power stages. The series includes seven enhancement-mode GaN HEMTs with continuous current ratings from 6 A to 29 A and typical RDS(on) values from 53 mΩ to 270 mΩ, while also featuring ultra-low internal capacitance and gate charge.

The devices are housed in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT packages provide Kelvin source connections to isolate the gate-control circuit from the main power path, enhancing noise immunity and driver protection.

Key devices include:

  • SGT350R70GTK: 6 A, 270 mΩ, 3-pin DPAK with solderable tab
  • SGT070R70HTO: 26 A, 53 mΩ, leadless TO-LL with thermally efficient drain/source
  • SGT080R70ILB, SGT105R70ILB, SGT140R70ILB, SGT190R70ILB, SGT240R70ILB: 10–29 A, PowerFLAT 8×8 with solderable source pad for enhanced thermal performance

The 700V PowerGaN transistors are in production now and available from the ST eStore or authorized distributors, priced from $0.63 to $2.25 per 1000-piece order.

For more information, please visit https://www.st.com/new-700v-powergan.