August 13, 2024 /SemiMedia/ -- According to reports, Samsung Electronics has confirmed an investment plan to build a 1γ DRAM memory production line at its Pyeongtaek P4 plant, which is expected to be put into operation in June next year.

Pyeongtaek P4 is a comprehensive semiconductor production center divided into four phases. In the earlier plan, the first phase was NAND flash memory, the second phase was logic foundry, and the third and fourth phases were DRAM memory. Samsung has introduced DRAM production equipment in the first phase of P4, but has shelved the construction of the second phase.

1γ DRAM is the sixth generation of 20 to 10 nm memory process. So far, 1γ nm products from major memory manufacturers have not been officially released. Samsung Electronics plans to start 1γ memory production by the end of this year, according to reports.

The report pointed out that Samsung Electronics is considering using 1γ DRAM die on the HBM4 memory to be launched in the second half of next year, using a more advanced DRAM process to improve the energy efficiency competitiveness of HBM4 products and catch up with SK Hynix, the leader in the HBM field.

Considering that HBM memory consumes much more DRAM wafers than traditional memory, the construction of the 1γ DRAM production line at Pyeongtaek P4 is also in preparation for possible HBM4 production needs.