November 5, 2026 / SemiMedia / — Samsung Electronics is reportedly planning a 2nm and 4nm foundry fab at its Giheung campus in Yongin, South Korea, to expand production of logic base dies for high bandwidth memory. The project, called Kairos, would support growing AI data center demand.

Investment in the fab is estimated at about KRW25 trillion, according to industry reports. The broader project could reach KRW30 trillion if it includes the conversion of an existing production line into an advanced packaging facility.

Samsung currently produces HBM4 DRAM core dies at Hwaseong and Pyeongtaek, with some foundry lines at those campuses making 4nm logic base dies. The new Giheung facility would add base die capacity and could give Samsung more flexibility in expanding HBM production.

Construction work is already underway. Samsung E&A disclosed on October 29 a KRW407.1 billion contract for framework construction covering the Kairos complex building, green building and substation.

The contract runs from September 14, 2026, to December 31, 2028. It covers part of the construction program; semiconductor equipment installation and commercial production dates have not been announced.