June 9, 2026 /SemiMedia/ — ROHM has introduced the TSC3PAK package (14.00 × 18.58 × 3.50 mm) for silicon carbide (SiC) MOSFETs, featuring a top-side heat dissipation structure that supports automated mounting while delivering heat dissipation comparable to conventional through-hole packages such as TO-247-4L. The package is aimed at enhancing efficiency and reliability in power conversion circuits for onboard chargers (OBCs) and electric compressors in xEVs, as well as industrial power applications.

In electric vehicles, SiC devices are increasingly applied beyond main inverters to OBCs and electric compressors to improve charging speed and cruising range. Industrial applications, including high-performance server power supplies and PV inverters, also require high-efficiency SiC operation.

The TSC3PAK package incorporates ROHM’s proprietary groove structure, providing a class-leading creepage distance of 6.66 mm, accommodating AC 1200 V peak voltage in Pollution Degree 2 environments, while maintaining compatibility with widely adopted products. The design enables safe insulation, reduces mounting costs, and enhances reliability.

Devices in the new package incorporate ROHM’s 4th generation SiC MOSFETs with low on-resistance and high-speed switching characteristics, significantly reducing switching losses and improving system efficiency.

Mass production began in June 2026. ROHM provides simulation models for all new products to support rapid circuit evaluation and will continue expanding its SiC MOSFET portfolio to deliver higher performance, smaller size, and greater reliability in electronic equipment.