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Home › Manufacturer › ROHM launches fourth-generation 650 V IGBTs with 7 µs short-circuit tolerance
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ROHM launches fourth-generation 650 V IGBTs with 7 µs short-circuit tolerance

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August 25, 2026

August 25, 2026 / SemiMedia / — ROHM has introduced fourth-generation 650 V IGBTs for automotive electric compressors, high-voltage heaters and industrial inverters. The new automotive-grade devices offer collector-emitter saturation voltage as low as 1.55 V and comply with the AEC-Q101 reliability standard.

ROHM redesigned the manufacturing process, device structure and edge termination to increase current density while reducing conduction and switching losses. The devices provide a short-circuit withstand time of 7 µs at a junction temperature of 25 °C, giving protection circuits time to detect and interrupt fault current.

The lineup includes 12 RGAxxTS65HR and RGAxxTS65EHR series products in the TO-247N package, with selected variants integrating a fast recovery diode. ROHM also offers 10 SG83xxWN series bare-wafer products.

The company is also developing 12 RGAxxTR65HR and RGAxxTR65EHR devices in the four-lead TO-247-4L package, which is intended to reduce package parasitic inductance and switching losses.

The TO-247N products and selected bare-wafer products are available now. Circuit design models and supporting technical materials are available through ROHM’s website.

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