October 10, 2026 / SemiMedia / — Renesas Electronics has introduced its first family of 100V enhancement-mode GaN power transistors, extending its GaN portfolio into low-voltage applications including AI data centers, humanoid robotics, industrial motor drives, power tools and solar microinverters.

The new family includes the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC and RTP100E1P2G1FL-DSC. The devices are aimed at 48V bus and high-power-density DC-DC conversion as AI servers and industrial systems increasingly adopt 800V HVDC distribution and lower-voltage intermediate power stages.

Renesas said the devices deliver up to 35% lower hard-switching figure of merit and up to 63% lower soft-switching figure of merit than comparable GaN products. Low gate charge and output charge reduce switching losses, while zero reverse-recovery charge further improves efficiency at high switching frequencies.

At the system level, the company said the new GaN devices can reduce switching losses by 40% to 70% and enable up to twice the power density of conventional designs. Efficiency can also improve by approximately 1% to 3% compared with silicon-based implementations.

The family is available in bottom-cooled and dual-side-cooled configurations and uses MOSFET-compatible package footprints to simplify migration from existing silicon designs. Devices span approximately 1.2mΩ to 5mΩ on-resistance, supporting applications including synchronous rectification, multiphase buck conversion and motor drives.

The low-voltage products complement Renesas' existing 650V GaN portfolio, giving the company broader coverage across AI data center power architectures from high-voltage distribution down to 48V and lower-voltage conversion stages.