October 1, 2026 / SemiMedia / — Renesas Electronics has introduced the TP65H020G4PLSGBD, a 650V GaN power device with dual-side cooling for high-density power conversion in 800V high-voltage DC AI data center architectures. The device offers 20mΩ on-resistance and is now sampling to major AI data center OEMs and ODMs.

Built on Renesas' Gen IV Plus GaN architecture, the device is designed for megawatt-scale AI infrastructure operating at up to approximately 700V. Target applications include 800V DC/DC intermediate bus converters that step power down to 48V, 12V or 6V, as well as battery backup and capacitor bank stages in sidecar power racks.

As AI rack power rises from roughly 120kW toward megawatt levels, board space and thermal management are becoming major design constraints. The new package dissipates heat through both the top and bottom surfaces, with Renesas reporting about a 10% reduction in top-side thermal impedance compared with conventional top-side-cooled packages.

The TP65H020G4PLSGBD uses an 8 × 8mm PQFN package that is about 57% smaller than Renesas' existing 10 × 15mm TOLT package. The reduced footprint is intended to increase power density and improve layout flexibility in high-voltage intermediate bus converter designs.

The device also features low gate charge and output capacitance, an integrated freewheeling diode with minimal reverse recovery, and a high threshold voltage that eliminates the need for negative gate bias. It can be driven with a standard silicon gate driver and supports switching into the MHz range, helping reduce the size of passive components and overall system BOM.

Renesas has validated the platform in a 6kW 800V-to-48V LLC DC transformer reference design controlled by an RA6T3 MCU. The design reaches 2.6kW/in³ power density and delivered 0.21 percentage points higher full-load efficiency than an equivalent TOLT-based board. Additional 800V-to-12V and 800V-to-6V intermediate bus reference designs are also based on the new 8 × 8mm dual-side-cooled platform.