June 22, 2026 /SemiMedia/ — onsemi has introduced GaNEXUS™, a new gallium nitride power portfolio designed to improve efficiency, power density and thermal performance in AI data centers, industrial automation, robotics and energy infrastructure.

The initial portfolio includes GaNEXUS FETs sampling across voltage ranges from 40V to 650V, as well as 650V GaNEXUS Smart devices with integrated protection features. onsemi said the integrated protection functions are intended to simplify system design, improve reliability and reduce qualification risk.

As AI infrastructure, electrification and industrial automation expand, power systems are facing increasing demands for higher efficiency, smaller size and lower cooling requirements. onsemi said AI data centers alone could consume up to 9% of U.S. electricity generation by 2030, while power and cooling costs may account for up to 40% of total data center operating expenses.

GaNEXUS is designed to address these challenges through faster switching speeds, lower switching losses, higher power density and improved thermal performance compared with conventional silicon-based solutions. These features can help reduce the size of magnetic components and cooling systems while improving overall power conversion efficiency.

The portfolio targets applications including AI data center power delivery, 48V systems, robotics, industrial motor drives, electric vehicle charging and energy infrastructure.

Antoine Jalabert, vice president of the GaN division at onsemi, said the GaNEXUS portfolio enables new power system architectures and gives engineers more flexibility as customers seek more power in less space.

In low- and medium-voltage systems such as AI server 48V intermediate bus converters, battery backup units and motor drives, GaNEXUS can enable magnetic components that are about 30% to 60% smaller, 1.5 times to 2 times higher power density and efficiency improvements of about 0.5% to 2%, depending on topology.

In higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, power factor correction and LLC power stages, the technology can reduce magnetic component size by up to about 60% in high-frequency AC-DC and resonant stages. It can also support 1.5 times to 2 times higher power density in PFC, LLC and high-voltage DC-DC architectures.

onsemi said GaNEXUS can be paired with its Treo Platform for integrated sensing, control, protection and power management. The combination is designed to help customers build smarter and more robust system-level power solutions while optimizing efficiency, thermal performance, system size and total cost across the power delivery chain.

GaNEXUS devices use thermally enhanced packages with industry-standard footprints to support dual sourcing. Package options include TOLL Bottom Cooling, TOLT Top Cooling, and dual-cooling 3.3mm × 3.3mm and 5mm × 6mm packages.

The company said GaNEXUS complements its silicon and EliteSiC technologies, giving customers more flexibility to choose the right power technology based on voltage range, efficiency targets, thermal requirements and system cost.