September 9, 2026 / SemiMedia / — ASML and TSMC have launched an industry initiative to transition EUV lithography from today's 6-inch photomasks toward larger 12-inch masks, with the goal of improving High NA EUV productivity and reducing the cost of manufacturing advanced chips.

The initiative targets establishment of a 12-inch mask pilot line by 2031 and readiness for 12-inch High NA lithography systems to enter advanced-node production by 2033. High NA EUV will initially continue to use existing 6-inch masks.

ASML said larger masks could increase scanner productivity while removing stitching constraints associated with the High NA exposure field, allowing chipmakers to make greater use of High NA EUV as more layers adopt the technology.

TSMC plans to begin using ASML High NA technology in high-volume manufacturing for advanced nodes starting in 2030. The foundry expects the number of layers requiring High NA EUV to increase as transistor architectures become more complex, particularly for AI applications.

ASML and TSMC established the initiative on September 7 ahead of the annual SPIE BACUS Conference in Monterey, California. Semiconductor manufacturers, mask suppliers and other ecosystem partners have also expressed interest in supporting the transition.

ASML's High NA EUV platform increases numerical aperture from 0.33 to 0.55, providing higher-resolution patterning for future generations of advanced logic and memory devices.

If the 12-inch mask ecosystem develops according to schedule, the transition will require coordinated changes across lithography systems, mask manufacturing, inspection and materials, creating the infrastructure needed for broader High NA EUV adoption in the next decade.