Infineon Technologies AG announces the 600 V CoolMOS™ S7 product family, providing a way for power density and energy efficiency for applications where MOSFETs are switched at a low frequency. The key features of the CoolMOS S7 product family include optimization for conduction performance, improved thermal resistance, and high-pulse current capability, all of these at the highest quality standards. Applications for the devices are i.e. active bridge rectification, inverter stages, PLCs, power solid-state relay and solid-state circuit breakers. Furthermore, the 10 mΩ CoolMOS S7 MOSFET is the industry’s smallest R DS(on) device.
The product family has been developed to minimize conduction losses and ensure the fastest response time together with increased efficiency for low-frequency switching applications. CoolMOS S7 devices deliver even lower R DS(on) x A compared to CoolMOS 7 products to successfully trade off switching losses for lower on-resistance and lower cost. The CoolMOS S7 products come with the lowest on-resistance (R DS(on)) in the market for a high-voltage switch. Additionally it has been achieved to fit the 10 mΩ chip into an innovative top side cooled QDPAK, and the 22 mΩ chip into a state-of-the-art small TO-leadless (TOLL) SMD package. These MOSFETs enable cost-effective, simple, compact and modular high-efficiency designs. Systems can easily meet regulations and energy efficiency certification standards (i.e., Titanium ® for SMPS) as well as fulfill power budgets and reduce part count, heat sinks and total cost of ownership (TCO).
The 22 mΩ 600 V CoolMOS S7 device is available in TO-leadless and TO-220, the 40 mΩ and 65 mΩ devices are available in TO-leadless packages. The 10 mΩ CoolMOS S7 MOSFET will be on stock in Q4 2020. More information is available at www.infineon.com/s7.