April 24, 2026 /SemiMedia/ — ROHM has introduced its 5th generation silicon carbide (SiC) MOSFETs, targeting high-efficiency power systems used in electric vehicles and AI-related infrastructure.

The new devices are part of the company’s EcoSiC series and are designed to reduce power loss in applications such as traction inverters, onboard chargers, and server power supplies.

Demand for power semiconductors has been rising with the growth of AI computing and data centers. Higher power density in servers is putting more pressure on power systems, making efficiency a key factor. At the same time, energy loss during conversion and storage remains a challenge across power networks.

In the automotive sector, electric vehicles require better efficiency to extend driving range and support faster charging. This is driving wider use of SiC devices in high-power systems.

ROHM said the new generation cuts on-resistance by about 30% at high temperature compared with its previous products, under the same voltage and chip size. This helps improve efficiency and allows smaller system designs, especially in EV applications.

The company started work on the new generation earlier and completed development in March 2026. Samples of discrete devices and modules are expected to be available from July.

ROHM plans to expand the lineup with more voltage options and packages, and continue to support customers with design tools and application support as SiC adoption grows.