April 9, 2026 /SemiMedia/ — Samsung Electronics is stepping up its move into 2nm manufacturing, shifting part of its overseas capacity toward next-generation nodes as competition with TSMC intensifies.

At its Taylor, Texas site, sections of the fab have received a temporary certificate of occupancy, allowing engineers to enter and begin equipment setup and process work. Industry sources said early-stage production activities began in March, with thousands of staff now supporting the ramp.

ASML has also sent teams to assist with the installation of EUV lithography tools, a key step for enabling Samsung’s 2nm gate-all-around (GAA) process. Tool readiness and process tuning at this stage are critical for improving yield before volume production.

If trial runs proceed as planned, the Taylor fab is expected to start initial operations in 2026, with full-scale production likely in 2027. The site will focus on 2nm GAA technology, which offers better power efficiency and transistor control compared with existing 4nm FinFET processes.

Samsung plans to use the node for future chips including its Exynos 2600 processor. The company is also working to secure more U.S.-based customers, especially in automotive and cloud-related segments.

Tight supply of TSMC’s 3nm capacity has left some customers looking for alternatives, creating an opening for Samsung. The company aims to improve yields and lower wafer costs, and could adjust pricing to win more advanced-node orders in the near term.