Rising demand for higher power density in industrial systems

December 8, 2025 /SemiMedia/ — ROHM has started mass production of its SCT40xxDLL family of SiC MOSFETs featuring a TOLL (TO-Leadless) package. The new devices deliver roughly 39% better thermal performance than comparable TO-263-7L products, enabling higher power handling in compact power modules widely used across the semiconductor and industrial sectors.

Growing demand for AI servers, high-density power supplies and energy storage systems is placing simultaneous pressure on manufacturers to increase output while reducing system size. Slim power platforms using totem-pole PFC architectures are particularly constrained, with discrete devices often required to remain below a 4-millimetre height limit.

ROHM’s TOLL-package SiC MOSFET features and product lineup

ROHM’s new TOLL-based lineup targets these design challenges. The package reduces board footprint by around 26% and limits device height to 2.3mm—nearly half the height of conventional packages—allowing more flexibility in thermal and mechanical design. The parts also raise the drain-source rating to 750V, exceeding the 650V level typical for standard TOLL devices and offering additional margin against voltage surges while lowering switching losses.

The series contains six models with on-resistance values ranging from 13mΩ to 65mΩ. Mass production began in September 2025, with samples priced at US$37 per unit before tax. ROHM expects the devices to support next-generation server power supplies, ESS platforms and industrial equipment that require higher efficiency and tighter form-factor control.