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Micron delays New York DRAM fab startup, shifts focus to Idaho

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November 12, 2025

November 12, 2025 /SemiMedia/ — Micron Technology has disclosed a significant delay in its ambitious DRAM manufacturing campus near Clay, New York, with first production now slated for late 2033 instead of the original 2025 target.

According to the company’s June draft environmental impact statement (EIS), the four-fab cluster — Fab 1 through Fab 4 — was scheduled to begin construction in late 2026 for Fab 1, with full ramp-up reaching around 2045.

But updated disclosure of environmental filings indicates that Fab 1’s build-cycle has extended from approximately three to four years, pushing its commissioning to late 2030 and setting a domino effect for subsequent fabs. Meanwhile, Micron is accelerating work on its Idaho facilities and reallocating part of its CHIPS Act funding away from New York to support that shift.

The company has confirmed amendments to its U.S. Commerce Department subsidy agreement, which allow later start-up for the New York project while prioritising the Idaho site — signalling a strategic realignment of its DRAM manufacturing footprint in the United States.

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CHIPS Act funding DRAM manufacturing US electronic components news Electronic components supplier Electronic parts supplier Idaho fab expansion Micron Technology New York memory campus on-shore memory production Semiconductor supply chain
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