February 12, 2026 /SemiMedia/ — Infineon Technologies has launched a new family of isolated gate driver ICs designed to help engineers adopt silicon carbide power devices without reworking existing opto-based control designs.

The EiceDRIVER 1ED301xMC12I series supports opto-emulator inputs and is pin-compatible with traditional optocouplers, allowing a smoother transition from silicon to SiC platforms in applications such as motor drives, solar inverters, EV chargers and energy storage systems.

Infineon said the devices offer higher noise immunity and tighter timing control than conventional solutions, helping improve switching accuracy in high-frequency power systems. Each variant delivers up to 6.5 amps of output current, making the parts suitable for power modules and parallel switch designs.

The product line includes three versions tailored for Si MOSFETs, IGBTs and SiC MOSFETs. The gate drivers come in a 6-pin DSO package with more than 8 mm creepage and clearance, and insulation certified to UL 1577.

With common-mode transient immunity exceeding 300 kV/µs and propagation delays around 40 ns, the devices are aimed at demanding power applications where fast and reliable control is critical. Infineon added that its PMOS output stage improves turn-on performance for SiC switches.

The devices are available now. For more information, please visit 1ED3010MC12I, 1ED3011MC12I, and 1ED3012MC12I.