July 2, 2025 /SemiMedia/ — ROHM has introduced the RY7P250BM, a 100V power MOSFET engineered for 48V hot-swap circuits in AI server platforms and industrial battery systems, combining wide Safe Operating Area (SOA) performance with industry-leading low ON-resistance.

As AI workloads push server power demands higher each year, data centers are increasingly adopting 48V architectures to improve efficiency and manage larger current loads. The RY7P250BM addresses these requirements by offering a low RDS(on) of just 1.86mΩ (VGS=10V, ID=50A, Tj=25°C)—approximately 18% lower than typical 100V MOSFETs in the same 8080 package—while maintaining wide SOA tolerance (VDS=48V, 1ms/10ms pulse support).

This combination enables high inrush current handling crucial for hot-swapping server modules under load. The device delivers 50A at 1ms and 16A at 10ms, providing protection and stability that standard MOSFETs often cannot.

ROHM's new product has already been qualified as a recommended component by a global cloud platform leader, where its performance characteristics have been favorably evaluated for next-generation AI server deployments. For more information, please visit https://www.rohm.com/products/mosfets/small-signal/single-nch/ry7p250bm-product.