May 21, 2025 /SemiMedia/ — onsemi has launched its first 1200V silicon carbide-based intelligent power module (IPM), the EliteSiC SPM 31, targeting high-efficiency inverter applications in sectors such as AI data centers, HVAC, robotics, and industrial automation.

The EliteSiC SPM 31 integrates M3-generation SiC MOSFETs, gate drivers, temperature sensors, and protection circuitry into a compact SPM 31 package. This configuration supports fast switching, low conduction losses, and robust short-circuit performance—making it ideal for space-constrained, high-efficiency designs.

Compared to existing Field Stop 7 IGBT modules, the new SiC IPM offers smaller footprint, higher power density, and reduced system-level cost. It can reduce energy losses by up to 52% per EC fan, according to onsemi, making it a strong candidate for cooling systems in large-scale AI server farms.

With current ratings ranging from 40A to 70A—and compatibility with IGBT SPM 31 boards rated 15A to 35A—onsemi now provides one of the most comprehensive IPM portfolios in the industry, enabling customers to scale easily across performance tiers using the same board layout.

The growth of AI data centers and industrial electrification is driving demand for efficient, compact motor drives. IPMs like the EliteSiC SPM 31 help reduce total cost of ownership while contributing to carbon emission reductions.

Additional features include under-voltage protection, integrated bootstrap diodes and resistors, and single-grounded power supply for reduced noise and improved safety. The IPM’s modular design allows faster development cycles, helping manufacturers respond to rapidly shifting application needs.

For more information, please visit EliteSiC SPM 31 IPMs and FS7 IGBT SPM 31 IPMs.