February 28, 2025 /SemiMedia/ — STMicroelectronics China recently announced that its joint venture 8-inch silicon carbide (SiC) wafer fab with Sanan Optoelectronics in Chongqing, known as “ST-Sanan Semiconductor Co., Ltd.,” has officially started production. This milestone marks significant progress towards the goal of local 8-inch SiC wafer production in China, with mass production slated to begin by the end of 2025. The facility is expected to better meet the growing demand for SiC in China’s electric vehicle, industrial power, and energy sectors.

In June 2023, STMicroelectronics and Sanan Optoelectronics jointly announced the establishment of the 8-inch SiC wafer fab in Chongqing. The total investment in the project is expected to reach RMB 23 billion (approximately USD 3.2 billion). The full-scale production of the fab is planned for Q4 2025, which will make it the first domestic mass production line for automotive-grade 8-inch SiC power chips.

The Chongqing Sanan Semiconductor Co., Ltd. (Chongqing Sanan) facility, located in the same industrial park, will provide exclusive 8-inch SiC substrates to the joint venture fab. Packaging and testing will be completed at STMicroelectronics' domestic facilities, forming a complete localized 8-inch SiC supply chain in China.

This collaboration between STMicroelectronics and Sanan Optoelectronics further promotes the localization of SiC materials and supports the rapid development of China’s electric vehicle and high-efficiency power electronics markets.