SemiMedia SemiMedia
  • Breaking News
  • MarketWatch
  • Distribution
  • Manufacturer
  • Video
  • About us
Home › MarketWatch › Infineon receives EU subsidy for smart power fab in Dresde
  • 0

Infineon receives EU subsidy for smart power fab in Dresde

SemiMediaEdit
February 24, 2025

February 24, 2025 /SemiMedia/ — The European Commission has approved nearly €1 billion in funding to support Infineon’s smart power fab project in Dresden, Germany. The project, which is set to boost semiconductor production capacity in Europe, will receive up to €920 million in direct grants from Germany’s Federal Ministry for Economic Affairs and Climate Action (BMWK). Final approval of the funding is expected in the coming months.

This 300mm smart power fab is part of the EU’s “Important Projects of Common European Interest” (IPCEI ME/CT) initiative, which supports innovation in microelectronics and communication technologies. Construction began in March 2023, with production slated to start in 2026 and full-scale operations expected by 2031.

Infineon CEO Jochen Hanebeck commented: "This government support strengthens the position of Dresden, Germany, and Europe as a semiconductor hub, fostering cutting-edge innovation and production ecosystems in microelectronics. Our investment will increase Europe’s semiconductor capacity, ensuring stable supply chains for automotive, security, and industrial sectors."

Infineon is investing a total of €5 billion to expand its Dresden facility, with the German government having already approved an early start to the project.

Related

Dresden semiconductor hub electronic components news EU chip funding EU semiconductor subsidy European semiconductor capacity expansion Infineon Dresden factory Infineon EU investment Infineon semiconductor investment Infineon smart power fab IPCEI ME/CT initiative semiconductor news Smart power semiconductor manufacturing
ADI sees strong growth in industrial, automotive, and communication sectors in Q1 FY2025
Previous
TI launches industry's first space-grade 200V GaN FET gate driver, enabling smaller and more efficient satellites
Next

All Comments (0)

Back
No Comment.

Top Post

Mouser Electronics expands to the Philippines with local customer service center
Fire broke out at AKM factory in Japan
Qualcomm ranked first in the world's top ten IC design companies
Analyze the key factors and prospects of electronic components shortage from the perspective of wafer industry
TSMC’s CoWoS capacity to reach 75,000 wafers/month by end-2025
onsemi expects to produce 200mm SiC wafers by 2025

Subscribe SemiMedia

Please check your E-mail to confirm the subscribtion.

Related posts

Taalas raises $169 mln to push model-specific AI inference chips

Taalas raises $169 mln to push model-specific AI inference chips

February 25, 2026
0
Infineon says humanoid robots may drive future growth

Infineon says humanoid robots may drive future growth

February 25, 2026
0
TSMC advances new 2nm fab plan in southern Taiwan

TSMC advances new 2nm fab plan in southern Taiwan

February 25, 2026
0
SK hynix says memory market turns seller-driven, prices seen rising through 2026

SK hynix says memory market turns seller-driven, prices seen rising through 2026

February 24, 2026
0
Copyright © 2017-2026 SemiMedia. Designed by nicetheme.
  • Please set up your first menu at [Admin -> Appearance -> Menus]
  • electronic components news
  • Electronic components supplier
  • Electronic parts supplier
  • Infineon
  • Electronic component news
  • Renesas
  • Vishay
  • STMicroelectronics
  • NXP
  • TDK

SemiMediaEdit

Administrator