December 12, 2024 /SemiMedia/ — onsemi has announced the acquisition of Qorvo’s silicon carbide (SiC) junction field-effect transistor (JFET) technology business and its subsidiary, United Silicon Carbide, for $115 million in cash. This move aims to enhance onsemi’s EliteSiC power solutions portfolio to meet the growing demand for high efficiency and high power density in AI data centers and emerging markets like electric vehicle (EV) circuit breakers and solid-state circuit breakers (SSCB).

SiC JFET technology offers exceptional advantages, including ultra-low on-resistance and compatibility with standard silicon drivers, delivering significant value in power design and data center operations. These features enable improved power density, reduced energy consumption, and simplified integration, addressing the complex demands of AI workloads.

Through this acquisition, onsemi plans to accelerate its expansion into critical markets such as EV circuit protection, providing customers with highly efficient and reliable solutions. Simon Keeton, Executive Vice President and General Manager of onsemi’s Power Solutions Group, highlighted that SiC JFETs are vital for addressing future high-efficiency, high-voltage power requirements, offering customers a competitive edge.

United Silicon Carbide’s legacy has laid the foundation for this acquisition. Its fourth-generation SiC FET products, featuring 750V voltage ratings and 5.9mΩ on-resistance, set an industry benchmark and are widely adopted in applications such as EV chargers, traction drives, server power supplies, and photovoltaic inverters. Looking ahead, SiC technology is poised to compete with IGBT technology and is expected to dominate high-power automotive and energy conversion systems.

This acquisition strengthens onsemi’s technical capabilities while marking its further expansion into AI data center power systems and EV markets. As SiC technology matures and costs decrease, its pivotal role in high-power applications will become increasingly evident.