September 2, 2024 /SemiMedia/ — SK Hynix has announced the successful development of the world's first sixth-generation 10nm-class (1c) 16Gb DDR5 DRAM, demonstrating its cutting-edge capabilities in advanced microfabrication. The company highlighted that the new process builds on the high-performance fifth-generation (1b) DRAM platform, while optimizing certain EUV processes and introducing new materials, significantly boosting cost efficiency and production yield.

The new 1c DDR5 DRAM is designed primarily for high-performance data centers, boasting an operating speed of 8Gbps, which is an 11% increase over the previous generation, and a more than 9% improvement in energy efficiency. SK Hynix expects that the adoption of 1c DRAM by cloud service providers could result in a significant reduction in electricity costs.

SK Hynix also noted that the development of the 1c process involved leveraging the 1b platform to minimize trial and error, resulting in a production efficiency increase of over 30% compared to the previous generation. The company plans to complete mass production preparations within the year and begin supplying products in 2025.

This technological breakthrough will extend to next-generation high-performance DRAM products, including HBM, LPDDR6, and GDDR7, offering differentiated value to customers. SK Hynix is committed to maintaining its leadership in the DRAM market and strengthening its position as a trusted provider of AI-driven memory solutions.