SemiMedia SemiMedia
  • Breaking News
  • MarketWatch
  • Distribution
  • Manufacturer
  • Video
  • About us
Home › Manufacturer › Vishay introduces new 890 nm IR emitting diode with high typical radiant intensity of 235 mW/sr and fast switching times of 15 ns
  • 0

Vishay introduces new 890 nm IR emitting diode with high typical radiant intensity of 235 mW/sr and fast switching times of 15 ns

SemiMediaEdit
July 19, 2024

July 19, 2024 /SemiMedia/ -- Vishay Intertechnology, Inc. announced the expansion of its optoelectronic product portfolio with the introduction of new 890 nm high-speed infrared (IR) light-emitting diodes packaged in clear, colorless lead plastic. Based on surface emitter technology, the Vishay TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices.

The emitter diode released today offers high typical radiant intensity of 235 mW/sr at a 100 mA drive current, which is 50 % higher than previous-generation solutions. With fast switching times of 15 ns, low typical forward voltage of 1.5 V, and a narrow ± 10° angle of half intensity, the device will serve as a high intensity emitter for smoke detectors and industrial sensors. In these applications, the TSHF5211 offers good spectral matching with silicon photodetectors.

RoHS-compliant, halogen-free, and Vishay Green, the device is lead (Pb)-free and capable of lead (Pb)-free soldering up to 260 °C.

Samples and production quantities of the TSHF5211 are available now, with lead times of 20 weeks for large orders.

For more information, please visit https://www.vishay.com/en/product/80343/.

Related

electronic components news Electronic components supplier Electronic parts supplier TSHF5211 Vishay
TI introduces new magnetic packaging technology for power modules to reduce power solution size in half
Previous
Insider: OSAT increases capital expenditures to respond to growing demand for advanced packaging
Next

All Comments (0)

Back
No Comment.

Top Post

Mouser Electronics expands to the Philippines with local customer service center
Qualcomm ranked first in the world's top ten IC design companies
Fire broke out at AKM factory in Japan
TSMC’s CoWoS capacity to reach 75,000 wafers/month by end-2025
onsemi expects to produce 200mm SiC wafers by 2025
SEMI: Global semiconductor equipment sales are expected to hit a new record in 2024

Subscribe SemiMedia

Please check your E-mail to confirm the subscribtion.

Related posts

NVIDIA Invests $3.5 Billion in MediaTek, Expands AI Partnership Across Data Centers, PCs and Automotive

NVIDIA Invests $3.5 Billion in MediaTek, Expands AI Partnership Across Data Centers, PCs and Automotive

September 1, 2026
0
CXMT Begins Small-Scale HBM3E Production, Targets 350,000 DRAM Wafers per Month by Year-End

CXMT Begins Small-Scale HBM3E Production, Targets 350,000 DRAM Wafers per Month by Year-End

September 1, 2026
0
Vishay Launches 17-Device IFBT Flyback Transformer Series for 26 V to 72 V Input and Up to 30 W Designs

Vishay Launches 17-Device IFBT Flyback Transformer Series for 26 V to 72 V Input and Up to 30 W Designs

August 31, 2026
0
Vishay launches four automotive common mode chokes with DCR down to 0.4 mΩ

Vishay launches four automotive common mode chokes with DCR down to 0.4 mΩ

August 26, 2026
0
Copyright © 2017-2026 SemiMedia. Designed by nicetheme.
  • Breaking News
  • MarketWatch
  • Distribution
  • Manufacturer
  • Video
  • About us
  • electronic components news
  • Electronic components supplier
  • Electronic parts supplier
  • Electronic components distributor
  • Infineon
  • Electronic component news
  • Renesas
  • Vishay
  • STMicroelectronics
  • NXP

SemiMediaEdit

Administrator