Chinese memory maker ChangXin Memory Technologies, or CXMT, has begun producing HBM3E high-bandwidth memory in small quantities and plans to expand production in 2027, The Information reported on August 31.

The development marks another step in China's effort to establish a domestic supply of advanced memory for AI processors.

According to the report, Chinese chip designers including Alibaba's T-Head and Cambricon are testing CXMT's HBM with their processors. If qualification proceeds as planned, the companies could begin using CXMT memory in products as early as 2027.

CXMT has not disclosed detailed specifications or production yields for its HBM3E products. The company is still facing yield challenges, while HBM manufacturing requires multiple DRAM dies to be stacked and packaged, making volume production considerably more complex than conventional DRAM.

CXMT is also rapidly expanding its broader DRAM manufacturing capacity. Industry reports indicate that its 12-inch fabs in Hefei and Beijing currently have combined capacity of about 200,000 wafers per month, with output expected to increase to approximately 350,000 wafers per month by the end of 2026.

HBM has become a critical component for AI accelerators. SK hynix, Samsung Electronics and Micron have already moved into HBM4 production and are advancing toward HBM4E, leaving CXMT behind the global technology leaders despite its progress with HBM3E.

U.S. restrictions on advanced HBM shipments to China have also increased the importance of domestic memory supply for Chinese AI chip developers. CXMT's yield improvement, customer qualification and planned production expansion in 2027 will therefore be key indicators of how quickly its HBM3E business can move toward larger-scale commercial production.