May 19, 2026 /SemiMedia/ — Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants for high-voltage power systems. The modules support DC-link voltages up to 1500 V, addressing industry trends toward higher system voltages.

The new modules offer on-resistance (RDS(on)) values from 1 mΩ to 2 mΩ and isolation voltages of 4 kV or 6 kV. By leveraging silicon carbide (SiC) technology, switching and conduction losses are reduced compared to conventional silicon solutions, enabling higher inverter efficiency, increased power density, or higher switching frequencies to reduce harmonics and system size.

XHP 2 package ensures symmetrical switching behavior for easy paralleling in large power converters and provides a standardized platform allowing developers to balance efficiency and performance. All variants integrate Infineon’s proven .XT interconnection technology for enhanced reliability and extended lifetime, and include pre-applied thermal interface material for consistent thermal performance and simplified assembly.

System-level benefits have been demonstrated, with a wind power demo achieving 300 kW/L power density and battery storage tests showing semiconductor losses under 0.7% of output power. This portfolio expansion supports scalable high-voltage power system solutions across renewable energy applications, including wind, photovoltaic, and battery storage.

For more information, please visit https://www.infineon.com/products/power/mosfet/silicon-carbide/modules.