Infineon Technologies has released a new generation of its EiceDRIVER™1ED Compact isolated gate driver series: the X3 Compact (1ED31xx) series. This gate driver provides separate output options together with active shutdown and short circuit clamping in DSO-8 300 mil package. The active Miller clamp option is best suited for silicon carbide (SiC) MOSFET 0 V turn off. The X3 Compact offers a benchmark CMTI of 200 kV/μs, and typical 5, 10, and 14 A output current. It is aiming at industrial drives, solar systems , EV charging, uninterruptible power supplies, commercial air conditioning as well as other applications.

The EiceDRIVER X3 Compact is recognized under UL 1577 with an insulation test voltage of 5.7 kV RMS. Its 14 A high output current is well suited for high switching frequency applications as well as for IGBT 7, which requires a much higher gate driver output current compared to IGBT 4. With the same exceptional CMTI robustness as the X3 Enhanced of more than 200 kV/µs, the X3 Compact also avoids faulty switching patterns. The tight propagation delay matching of 7 ns (max.) leads to shorter deadtime. All variants integrate input filters, which reduces the need for external filters, provides accurate timing, and leads to lower BOM cost.

The EiceDRIVER X3 Compact is the perfect driver for superjunction MOSFETs such as CoolMOS™, SiC MOSFETs such as CoolSiC™, and IGBT modules. It is designed for markets that demand easy-to-use drivers with a small footprint for quick design-ins. With 40 V absolute maximum output supply voltage, 1ED31xx is perfectly fit for rugged environments.

The EiceDRIVER X3 Compact can be ordered now, as can the evaluation boards EVAL-1ED3121MX12H, EVAL-1ED3122MX12H, EVAL-1ED3124MX12H. More information is available at www.infineon.com/1EDcompact.