September 30, 2025 /SemiMedia/ — ROHM and Infineon Technologies AG have signed a memorandum of understanding to broaden their cooperation in silicon carbide (SiC) power semiconductor packaging. The partnership will allow both companies to act as second sources for selected SiC packages, giving customers more flexibility in design and procurement.

Under the agreement, ROHM will adopt Infineon’s top-side cooling platform, covering TOLT, D-DPAK, Q-DPAK and H-DPAK packages. The platform, which features a standardized height of 2.3 mm, is designed to improve cooling performance, cut system costs and double power density. Infineon, in turn, will incorporate ROHM’s DOT-247 half-bridge package, which delivers higher power density and lower thermal resistance than conventional TO-247 devices.

The two companies said the collaboration aims to accelerate the adoption of SiC power electronics in areas such as on-board chargers, photovoltaics, energy storage and AI data centers. They plan to extend the partnership to other silicon and wide-bandgap technologies including gallium nitride (GaN).

SiC-based semiconductors are increasingly used in high-power applications thanks to their ability to switch electricity more efficiently and withstand extreme conditions, enabling smaller and more energy-efficient designs.