September 29, 2025 /SemiMedia/ — Russia’s Institute of Microstructure Physics under the Academy of Sciences has unveiled a roadmap for extreme ultraviolet (EUV) lithography equipment, targeting chip production from 40nm down to below 10nm by 2037. The project will use a non-standard wavelength of 11.2nm and is set to begin in 2026.

Unlike ASML’s architecture, the Russian design proposes hybrid solid-state lasers, xenon plasma light sources, and Ru/Be mirrors to reflect 11.2nm light. The institute said the approach could cut mask damage and reduce maintenance costs, while avoiding the complexity of immersion fluids and multiple patterning in deep ultraviolet lithography.

The roadmap outlines three phases:

  • From 2026 to 2028, a tool capable of 40nm production with dual-mirror optics, 10nm overlay accuracy and throughput of more than five wafers per hour.
  • Between 2029 and 2032, a scanner aimed at 28nm and potentially 14nm, featuring a four-mirror system, 5nm alignment precision and over 50 wafers per hour.
  • From 2033 to 2036, equipment designed for sub-10nm nodes, using six mirrors, 2nm overlay and capacity above 100 wafers per hour.

The institute claims these systems will support resolutions from 65nm to 9nm, offering cost advantages over ASML’s Twinscan NXE and EXE platforms.

Analysts note the plan highlights Russia’s ambition to localize chipmaking, but the feasibility remains uncertain given the challenges of using a non-standard EUV wavelength and the scale required for industrial deployment.