September 26, 2025 /SemiMedia/ — Samsung Electronics is projected to secure more than 30% of the high-bandwidth memory (HBM) market next year, according to data from Counterpoint Research released on Wednesday.

In the second quarter, SK Hynix led the segment with a 62% share, followed by Micron Technology with 21% and Samsung with 17%. Analysts said Samsung’s position is expected to strengthen as its HBM3E gains key customer certifications and HBM4 enters Nvidia’s supply chain.

Samsung completed development of HBM4 based on its 10-nanometer-class sixth-generation (1c) DRAM process earlier this year, delivering samples to customers and planning mass production by year-end. The new chip reportedly improves power efficiency by 40% and supports data rates up to 11Gbps. To support output, Samsung has resumed construction of its Pyeongtaek Line 5 fab.

Counterpoint added that Korean suppliers will further consolidate their lead as HBM4 adoption grows. SK Hynix has also finished HBM4 development and set up mass production, with its chips expected to be used in Nvidia’s next-generation Rubin GPU if quality tests are cleared.

Chinese players are also working on HBM, but still face hurdles in speed and thermal management. Products initially planned for shipment this year are now unlikely to hit the market until late 2025.