December 24, 2025 /SemiMedia/ — Power semiconductor supplier onsemi has entered a collaboration with GlobalFoundries to develop next-generation gallium nitride (GaN) power devices, using the foundry’s 200mm GaN-on-silicon manufacturing platform, the companies said.

200mm GaN platform accelerates power semiconductor development

The partnership will initially focus on 650-volt GaN products, with GlobalFoundries providing its enhancement-mode GaN process technology and manufacturing capabilities, while onsemi leads device design and system-level integration. The collaboration is aimed at accelerating onsemi’s roadmap for high-voltage GaN power devices.

GaN power devices target data centers and electrification markets

Demand for GaN-based power semiconductors has been rising as data centers, electric vehicles and industrial systems push for higher efficiency and power density. Compared with conventional silicon devices, GaN enables higher switching frequencies and more compact power architectures.

onsemi plans to combine the GaN devices with its existing portfolio of silicon-based drivers, controllers and thermally optimized packaging, offering integrated power solutions rather than standalone components. The approach reflects a broader shift in the power semiconductor industry toward system-level optimization.

System-level integration reshapes GaN power design strategies

For GlobalFoundries, the project strengthens its position in specialty semiconductor manufacturing. The company is expanding its GaN offerings on 200mm wafers, with an emphasis on U.S.-based production to support customers in automotive, industrial, aerospace and defense-related markets.

onsemi expects to begin sampling the new GaN power devices in the first half of 2026, with volume production to follow as customer qualifications progress, the company said.