August 28, 2025 /SemiMedia/ — Toshiba Electronic Devices & Storage Corp of Japan has signed a memorandum of understanding (MOU) with China’s silicon carbide (SiC) wafer producer SICC Co. Ltd to collaborate on improving SiC wafer characteristics and securing a stable supply of high-quality substrates.

Toshiba has been developing SiC power semiconductors for railway applications and is now accelerating expansion into automotive systems, server power supplies and high-efficiency power conversion. The company aims to reduce power losses and enhance device reliability, with SICC expected to play a key role in meeting future material needs.

Founded in 2010, SICC specializes in single-crystal SiC wafer technology. After its IPO in 2022, the company expanded globally and in 2024 released the industry’s first 12-inch SiC wafer. By 2025, SICC introduced 12-inch substrates across its entire portfolio, including n-type, semi-insulating and p-type wafers.

Through the collaboration, Toshiba and SICC intend to align wafer technology with the requirements of SiC device manufacturers, advancing material quality and accelerating the growth of the SiC power semiconductor market.