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Samsung delays DDR4 1z phase-out to 2026 amid surging demand and HBM constraints

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August 7, 2025

August 7, 2025 /SemiMedia/ — Samsung has decided to extend production of its DDR4 1z node DRAM chips until the end of 2026, reversing an earlier plan to phase out the line by the end of 2025, sources familiar with the matter said.

The shift comes as the company faces delays in high bandwidth memory (HBM) certification, trailing behind rivals SK Hynix and Micron. With HBM in high demand for AI applications and capacity ramping underway, Samsung is seeking to optimize its existing assets, including fully depreciated DDR4 lines that remain profitable.

A person close to the matter said Samsung will soon inform clients of the updated timeline. The decision was also influenced by a sharp rise in DDR4 prices due to tightening supply, as major memory makers reallocate resources to boost HBM output.

According to DRAMeXchange, the contract price for PC-class 8Gb DDR4 (1Gx8) chips surged 50% to $3.90 by the end of July. The chip had already seen double-digit monthly gains in April (22.22%), May (27.27%), and June (23.81%). TrendForce data shows DDR4 8GB module prices in July climbed to $26.50, surpassing DDR5 modules at $25.50.

Some equipment makers have also begun stockpiling DDR4 chips ahead of potential U.S. tariffs, contributing to the recent spike in demand. While the industry pivots toward next-generation memory, DDR4 remains a key revenue stream for suppliers during this transition phase.

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