July 16, 2025 /SemiMedia/ —Vishay Intertechnology has introduced three new 650 V and 1200 V Gen 3 silicon carbide (SiC) Schottky diodes in a compact SlimSMA HV (DO-221AC) package, designed to enhance energy efficiency in high-frequency and high-voltage power applications. The devices—VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3—leverage a merged PIN Schottky (MPS) architecture and deliver consistent switching performance across temperatures.

Key features include ultra-low capacitive charge down to 7.2 nC, negligible recovery tail, and a forward voltage drop as low as 1.30 V, which together enable faster switching, lower losses, and improved efficiency. With a low profile of 0.95 mm and creepage distance of 3.2 mm, the devices are optimized for space-constrained systems requiring robust insulation performance.

The SlimSMA HV package incorporates a high CTI molding compound (≥600) for enhanced electrical insulation. Typical use cases include PFC, bootstrap, and anti-parallel diodes in AC/DC and DC/DC converters for server power supplies, energy storage, industrial drives, and X-ray systems.

The devices support parallel operation due to their positive temperature coefficient and withstand high operating temperatures up to +175 °C. RoHS-compliant and halogen-free, the diodes meet MSL 1 requirements and pass the JESD 201 class 2 whisker test.

Samples and production quantities are available now with lead times of 14 weeks. For more information, please visit VS-3C01EJ12-M3, VS-3C02EJ07-M3 and VS-3C02EJ12-M3.