May 13, 2025 /SemiMedia/ — Infineon Technologies AG has introduced its latest CoolGaN™ 650 V G5 bidirectional switch (BDS), a monolithic gallium nitride (GaN) device designed to simplify and enhance modern power architectures. The new switch features active blocking of voltage and current in both directions and is built on a double-gate, common-drain design using Infineon’s proprietary gate injection transistor (GIT) technology.

Targeting advanced power systems across multiple sectors, the CoolGaN BDS integrates two switches into a single device, offering a streamlined alternative to traditional back-to-back switch configurations. This enables single-stage conversion in systems such as microinverters, energy storage platforms, and electric vehicle (EV) chargers—improving efficiency, increasing power density, and lowering component count.

In EV infrastructure, the device supports both rapid charging and vehicle-to-grid (V2G) capabilities. In solar energy, it enables smaller, more cost-effective microinverter designs for rooftop installations. The switch also brings value to battery storage systems, enabling more robust bidirectional operation with reduced energy loss.

For industrial motor drives, the BDS is ideal in current source inverter (CSI) topologies. Compared to traditional voltage source inverters (VSIs), CSIs benefit from better fault tolerance, longer cable capabilities, reduced EMI, and better thermal performance due to the elimination of bulky DC-link capacitors.

In the AI server segment, the CoolGaN BDS is suitable for high-frequency power designs such as Vienna rectifiers and H4 PFC circuits. Its ability to replace two discrete switches with a single compact device reduces system complexity, board space, and thermal load.

Infineon’s CoolGaN BDS 650 V G5 is now available for order, including samples of the 110 mΩ variant. More information is available here.