May 12, 2025 /SemiMedia/ — Nexperia has introduced a new line of automotive-grade silicon carbide (SiC) MOSFETs, now certified to AEC-Q101 standards. Featuring RDS(on) ratings of 30, 40, and 60 mΩ, these devices—NSF030120D7A0-Q, NSF040120D7A1-Q, and NSF060120D7A0-Q—were previously available in industrial-grade versions and have now been qualified for electric vehicle (EV) applications such as onboard chargers (OBC), traction inverters, DC-DC converters, and HVAC systems.

Housed in surface-mount D2PAK-7 packages, these MOSFETs are optimized for automated production lines and provide an alternative to through-hole solutions. Nexperia emphasizes that while RDS(on) at 25 °C is commonly quoted, the real challenge lies in maintaining performance across temperature ranges. Many existing devices see their RDS(on) double as temperatures rise, but Nexperia’s new SiC MOSFETs exhibit only a 38% increase between 25 °C and 175 °C, setting a new standard for thermal stability in surface-mount designs.

This improved thermal behavior allows engineers to use higher nominal RDS(on) values without incurring significant conduction losses, thereby delivering more power per device while reducing system-level cooling demands. These advantages contribute to smaller passive components, improved system efficiency, and ultimately lower total cost of ownership for automotive OEMs.

“With this advancement, Nexperia enables customers to unlock greater output power and cost efficiency from their designs,” said Edoardo Merli, SVP and Head of Business Group Wide Bandgap, IGBT & Modules. “We’re proud to extend these benefits to the automotive market, where efficiency and reliability are critical.”

Nexperia also announced plans to expand the portfolio in 2025 with AEC-Q101 qualified SiC MOSFETs rated at 17 mΩ and 80 mΩ, further broadening its offering for high-performance automotive applications.

More information on Nexperia’s silicon carbide solutions is available at: www.nexperia.com/sic-mosfets