February 19, 2025 /SemiMedia/ — Infineon has shipped its first batch of silicon carbide (SiC) power devices manufactured using 200mm wafers, marking a key milestone in its efforts to reduce SiC device costs. Traditionally, most SiC devices have been produced using 150mm wafers, but scaling up to 200mm wafers presents significant challenges.

The shift to 200mm wafer manufacturing is crucial for lowering costs, and other companies, including Wolfspeed, STMicroelectronics, onsemi, ROHM, and Mitsubishi Electric, are also developing 200mm SiC technologies.

The high-voltage devices are produced at Infineon’s facility in Villach, Austria, while the shipment of these devices also represents a key step for its Kulim, Malaysia, plant, which is transitioning from 150mm to 200mm wafer production in its newly built Module 3.

Both Villach and Kulim facilities share technology and processes that enable rapid scaling and efficient operations for both SiC and gallium nitride (GaN) manufacturing.

Infineon’s Chief Operating Officer, Rutger Wijburg, commented, "Our SiC production is progressing as planned, and we are proud to deliver the first products to our customers. By gradually increasing SiC production capacity at both Villach and Kulim, we are enhancing cost efficiency while ensuring product quality. We are also securing manufacturing capacity to meet the growing demand for SiC-based power semiconductors."