July 3, 2024 /SemiMedia/ -- GlobalFoundries recently announced that it has acquired Tagore’s proprietary and production-proven power gallium nitride (GaN) technology and IP portfolio to push the boundaries of efficiency and performance for a wide range of power applications such as automotive, IoT and artificial intelligence (AI) data centers.

Founded in January 2011, fabless company Tagore aims to pioneer GaN-on-Si semiconductor technology for RF and power management applications, with design centers in Arlington Heights, Illinois, USA, and Kolkata, India.

GlobalFoundries said the announcement further solidifies the company's commitment to mass-producing GaN technology, which offers multiple advantages that can help data centers meet growing power demands while improving or maintaining power efficiency, reducing costs and controlling heat generation.

The acquisition expands GF’s power IP portfolio and broadens access to market-leading GaN IP, enabling GF clients to quickly bring differentiated products to market. As part of the acquisition, a team of experienced engineers from Tagore will join GF to develop GaN technology.

“The demand for more energy-efficient semiconductors is increasing dramatically, and Tagore has been at the forefront of developing disruptive solutions using GaN technology for a wide range of power devices. The team and I are excited to join GF to strengthen our focus on market-leading IP that will help solve power design challenges and support the continued evolution of power delivery systems for automotive, industrial and AI data centers,” said Amitava Das, co-founder and COO of Tagore.

By combining this manufacturing capability with the technical expertise of Tagore’s team, GF will transform the efficiency of AI systems, especially in edge or IoT devices, where reducing power consumption is critical.