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DB Hitek increases R&D of SiC and GaN

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October 24, 2023

October 24, 2023 /SemiMedia/ -- According to reports, South Korea’s wafer foundry DB Hitek has increased its research and development efforts in the fields of silicon carbide (SiC) and gallium nitride (GaN) semiconductors to support future business growth.

DB Hitek’s recent investment is aimed at increasing 8-inch wafer manufacturing capabilities. Still, its 8-inch wafer fab operations are expected to be affected due to a slow market recovery, while issues with switching to 12-inch wafer fab operations remain. Under this circumstance, DB Hitek's future development will focus on new power semiconductors such as GaN and SiC.

The report pointed out that the company has recently made initial investments in key equipment for next-generation GaN and SiC power semiconductors, which will accelerate research and development. Additionally, DB Hitek is working with the Busan Science and Technology Park to develop silicon carbide as part of government policy initiatives.

In terms of GaN semiconductor manufacturing, DB HiTek is working with fabless company A-PRO Semicon to optimize the foundry process.

According to public information, DB HiTek has two fabs that produce ICs in the 350nm to 90nm manufacturing node range.

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