Nov. 22, 2022 /SemiMedia/ -- ROHM Semiconductor recently announced that it has signed a strategic partnership agreement with Basic Semiconductor in Shenzhen, China for automotive silicon carbide power devices.
Basic Semiconductor is a leading company in the SiC power device industry in China. According to ROHM Semiconductor, the two parties will give full play to their respective industrial advantages, carry out in-depth cooperation on the innovation and upgrade of silicon carbide power devices, performance improvement and other aspects, and develop more advanced, more efficient and more reliable silicon carbide solutions for new energy vehicles.
As the first batch of cooperation results, the on-board power modules that integrate the technologies of both parties will be provided to large automobile companies for the powertrain system of electric vehicles.
"We are very honored to cooperate with ROHM, an internationally renowned semiconductor manufacturer, to jointly create high-performance, high-reliability vehicle-mounted silicon carbide power products that satisfy customers, and to jointly promote technological innovation in electric vehicles and contribute to low-carbon emission reduction,” said He Weiwei, General Manager of Basic Semiconductor.
"We are very pleased to conclude a strategic partnership with Basic Semiconductor to jointly provide very competitive silicon carbide solutions for the new energy vehicle market. As semiconductors play an increasing role in the automotive field, ROHM will strive to manufacture high-quality products in the future, and at the same time, provide a wide range of solutions to contribute to the creation of a safe, safe, and environmentally friendly society," said ROHM Chairman Isao Matsumoto.