July 9, 2026 /SemiMedia/ — Vishay Intertechnology has introduced four new 40 V TrenchFET Gen IV standard-level n-channel power MOSFETs designed for noisy motor control environments.

The Vishay Siliconix SIR5402DP, SIR5404DP, SIR5406DP and SIR5408DP are offered in the 6.15 mm by 5.15 mm PowerPAK SO-8 single package.

The devices combine a high minimum gate-source threshold voltage of more than 2.5 V with Qgd / Qgs ratios of less than 1. The high threshold voltage helps prevent false MOSFET triggering caused by gate noise in motor control circuits, while the optimized Qgd / Qgs ratio reduces gate-induced voltage fluctuations.

Vishay said the MOSFETs are suited for synchronous rectification and DC/DC conversion in BLDC motors, power tools, drones and automation systems.

To meet different application requirements, the four devices are available with typical on-resistance values ranging from 0.9 mΩ to 2.5 mΩ at 10 V, and gate charge values ranging from 32.6 nC to 82 nC.

In motor drive and power conversion systems, MOSFETs must balance low conduction loss, switching performance and noise immunity. In BLDC motors, battery-powered tools and automation equipment, false gate triggering can reduce efficiency, disrupt switching behavior or affect system reliability.

The new standard-level MOSFETs are 100% RG- and UIS-tested, RoHS-compliant and halogen-free.

Availability
Samples and production quantities of the SIR5402DP, SIR5404DP, SIR5406DP and SIR5408DP are available now, with a lead time of approximately 13 weeks.