April 15, 2025 /SemiMedia/ — Infineon Technologies AG has introduced the industry’s first gallium nitride (GaN) power transistor family with an integrated Schottky diode for industrial applications. The new CoolGaN™ G5 series significantly enhances power system efficiency while simplifying power stage design—a critical advancement as wide-bandgap semiconductors gain momentum in industrial sectors.

In conventional hard-switching applications, GaN devices suffer increased power losses due to the absence of a body diode, especially during reverse conduction phases. Engineers often compensate with external Schottky diodes or complex dead-time control, adding cost and complexity. Infineon’s CoolGaN G5 addresses these limitations by integrating a Schottky diode directly into the GaN transistor, reducing reverse conduction losses and easing controller constraints.

This integration simplifies compatibility with high-side gate drivers, reduces controller design limitations, and broadens system compatibility across telecom rectifiers, server DC-DC converters, USB-C synchronous rectifiers, high-power power supply units, and motor drives.

“The integration of a Schottky diode within a GaN transistor is a milestone for industrial power electronics,” said Antoine Jalabert, Vice President of Infineon’s Medium-Voltage GaN product line. “It reflects Infineon’s commitment to fast-track innovation and redefine what's possible with wide-bandgap materials.”

The first device in the CoolGaN G5 family is a 100 V, 1.5 mΩ transistor housed in a compact 3x5 mm PQFN package, with additional variants expected. By reducing BOM cost and design complexity, the product helps accelerate the deployment of high-efficiency GaN-based systems in industrial applications.