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Samsung announced mass production of 1TB eUFS2.1

SemiMediaEdit
January 30, 2019

Today, Samsung Electronics announced that the 1TB eUFS2.1 has officially entered the mass production phase.

The product uses Samsung's fifth-generation V-NAND technology. In the same package size (11.5mm x 13.0mm), the 1TB eUFS solution combines 16 stacked 512Gb V-NAND flash memories with a newly developed proprietary flash controller, double the capacity of the previous 512GB version. The new eUFS speeds up to 1,000MB/s per second, with random reads and writes of 58,000 IOPS and 50,000 IOPS, a 38% increase over 512GB.

Samsung plans to expand its fifth-generation 512Gb V-NAND production at its Pyeongtaek facility in South Korea in the first half of 2019 to fully meet the strong demand of global mobile device manufacturers for 1TB eUFS.

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