January 5, 2026 /SemiMedia/ — SK hynix said its first cleanroom at the Yongin semiconductor cluster in South Korea will begin operations in March 2027, about two months earlier than initially scheduled, as the memory chipmaker accelerates preparations for next-generation high bandwidth memory (HBM) production.

Rising AI workloads drive demand for high bandwidth memory

The Yongin facility is designed to support research and manufacturing of advanced HBM products, which are increasingly critical components in AI accelerators and high-performance computing systems. Demand for HBM has surged alongside the rapid expansion of data centre investment and large-scale AI model training.

Limited HBM supply reshapes the global memory market

HBM combines multiple DRAM dies through advanced packaging to deliver higher bandwidth and power efficiency than conventional memory. However, supply remains constrained, with mass production currently limited to a small group of suppliers including SK hynix, Samsung Electronics and Micron Technology.

Capacity expansion and advanced nodes support future HBM growth

To expand output, SK hynix has committed more than 20 trillion won to its M15X fab, with full-scale production targeted for 2027. Once operational, the company expects total DRAM capacity to reach roughly 550,000 wafers per month, strengthening its ability to meet rising HBM orders.

On the technology front, SK hynix is advancing its sixth-generation 1α/1c nanometre DRAM process, which will underpin future HBM4 and subsequent products. Industry observers say the earlier-than-planned launch of the Yongin cleanroom underscores the company’s efforts to reinforce its position in the global high-performance memory market amid persistent AI-driven supply tightness.