Infineon broadens 750V SiC portfolio to address power density demands

December 16, 2025 /SemiMedia/ — Infineon Technologies has expanded its CoolSiC MOSFET 750V G2 portfolio with additional package options, reinforcing its focus on silicon carbide devices for automotive and industrial power conversion systems.

The latest lineup includes Q-DPAK and D2PAK packages, offering a wider range of on-resistance levels, with typical RDS(on) values reaching up to 60 milliohms at 25°C. The company said the new options are designed to address applications where system efficiency and power density are becoming increasingly critical.

Automotive and industrial systems drive adoption of 750V CoolSiC MOSFETs

Target applications include onboard chargers and high-voltage to low-voltage DC-DC converters in electric vehicles, as well as server and telecom power supplies and EV charging infrastructure. Devices with ultra-low on-resistance, down to 4 milliohms, are aimed at static-switching use cases such as eFuses, high-voltage battery disconnects, solid-state circuit breakers and relays.

Packaging and thermal design improve efficiency and robustness

Infineon highlighted its top-side cooled Q-DPAK package as a key enabler for thermal performance and long-term reliability in high-power designs. The company added that improvements in figures of merit such as RDS(on) × QOSS and RDS(on) × Qfr help reduce switching losses in both hard- and soft-switching topologies.

The 750V G2 devices also feature a higher gate threshold voltage and a low QGD-to-QGS ratio, enhancing robustness against parasitic turn-on. Extended gate-driving capability, including support for negative gate voltages, provides designers with additional margin and compatibility across different system architectures.

Samples of the CoolSiC MOSFET 750V G2 devices in Q-DPAK and D2PAK packages are now available, Infineon said.