November 26, 2025 /SemiMedia/ — ROHM has introduced the RS7P200BM, a 100V MOSFET that delivers strong safe operating area performance in a compact 5.0mm × 6.0mm DFN package. The device targets 48V hot-swap stages in AI servers and supports battery protection requirements in industrial systems.

AI server power trends and device requirements

The rapid expansion of generative AI and high-performance GPUs is pushing data-center power architectures toward 48V distribution, a shift driven by efficiency requirements. This transition increases the electrical stress placed on hot-swap components, heightening demand for MOSFETs that offer both high voltage capability and reliable SOA margins.

To address these needs, ROHM has broadened its 100V MOSFET portfolio with the addition of the RS7P200BM. The new device offers higher board-level power density than the RY7P250BM introduced earlier this year, thanks to its smaller DFN5060-8S package.

Device performance and availability

Under 48V operation, the MOSFET maintains a wide SOA—7.5A at 10ms and 25A at 1ms—while achieving a low RDS(on) of 4.0mΩ at VGS=10V, ID=50A. This balance helps limit heat buildup inside server power modules, improving efficiency and reducing cooling requirements.

Mass production began in September 2025 with a sample price of $5.5 per unit before tax, and the device is available through distributors.