October 31, 2025 /SemiMedia/ — onsemi has introduced its new generation of vertical gallium nitride (vGaN) power semiconductors designed for high-power and high-efficiency applications such as AI data centres, electric vehicles and renewable-energy systems.

Built on a proprietary GaN-on-GaN structure, the devices conduct current vertically through the semiconductor material rather than laterally. This design supports higher voltages of over 1,200 V, faster switching speeds and increased power density, enabling more compact and energy-efficient system designs.

The company said the new devices can reduce energy losses by up to 50% and shrink component size by around two-thirds compared with lateral GaN solutions. Such performance gains are expected to benefit 800 V DC-DC converters in AI servers, smaller EV inverters and high-efficiency renewable-energy inverters.

onsemi also pointed to its strong R&D and manufacturing capabilities in Syracuse, New York, backed by a broad portfolio of patents covering device, process and system-level technologies.

For the broader semiconductor ecosystem, the arrival of vGaN marks a transition in power-device demand toward higher-density and performance-driven markets. Industry participants are expected to track the production ramp-up, customer qualifications and adoption trends closely.

With the launch of vGaN, onsemi aims to strengthen its position in the evolving power-semiconductor landscape, where efficiency and power density are becoming key competitive factors across AI, automotive and energy sectors.